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Product Description | Description Boron nitride suspension (h-BN) (1 mg/mL in water) has a hexagonal bonded structure, with high mechanical strength and good thermal conductivity. It belongs to the class of hexagonal layered materials. It has a direct band gap of 5.8 eV and can be used as a dielectric layer in electronic devices.2D-hexagonal boron nitride (2D-hBN) is a structural isomorph of graphene and it possesses high chemical, mechanical and thermal stability. However, unlike graphene, the 2D-hBN is a high band gap material. The 2D-hBN exhibits exotic optical and electrical properties and find applications in field effect transistors (FETs), photoelectric devices and UV detectors.h-BN can be used in the fabrication of photonic devices. It can also be used as a multifunctional additive in a polymeric electrolyte for the formation of lithium metal batteries. |
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1. Gwan-Hyoung Lee, Young-Jun Yu, Xu Cui, Nicholas Petrone, Chul-Ho Lee, Min Sup Choi, Dae-Yeong Lee, Changgu Lee, Won Jong Yoo, Kenji Watanabe, Takashi Taniguchi, Colin Nuckolls, Philip Kim, James Hone,. (2013-08-09) Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures.. ACS nano, 7 ((9)): ( 7931-7936 ). [PMID:23924287] |
2. F Withers,O Del Pozo-Zamudio,A Mishchenko,A P Rooney,A Gholinia,K Watanabe,T Taniguchi,S J Haigh,A K Geim,A I Tartakovskii,K S Novoselov. (2015-02-03) Light-emitting diodes by band-structure engineering in van der Waals heterostructures.. Nature materials, 14 ((3)): (301-306). [PMID:25643033] |