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Silicon - sputtering target, diam. × thickness 2.00 in. × 0.25 in., 99.999% trace metals basis, high purity , CAS No.7440-21-3

  • PrimorTrace™
  • ≥99.999% metals basis
  • sputtering target, diam. × thickness 2.00 in. × 0.25 in.
Item Number
S434734
Grouped product items
SKUSizeAvailabilityPrice Qty
S434734-1EA
1EA
Available within 8-12 weeks(?)
Production requires sourcing of materials. We appreciate your patience and understanding.
$894.90

Basic Description

Synonyms7440-21-3|Si|Silicon|Silicone|Silicon powder|Z4152N8IUI|90337-93-2|DTXSID0051441|CHEBI:27573|MFCD00085311|Silicon metal|SILICON (II)|SILICON [II]|SILICON (MART.)|SILICON [MART.]|Defoamer S-10|silicio|Silicon dust|MFCD00011228|Silicon, elemental|Silicon po
Specifications & Puritysputtering target, diam. × thickness 2.00 in. × 0.25 in., 99.999% trace metals basis
GradePrimorTrace™
Product Description

Application

Sputtering is a process whereby atoms are ejected from a solid target material due to bombardment of the target by energetic particles. The extreme miniaturization of components in the semiconductor and electronics industry requires high purity sputtering targets for thin film deposition

Names and Identifiers

IUPAC Name silicon
INCHI InChI=1S/Si
InChi Key XUIMIQQOPSSXEZ-UHFFFAOYSA-N
Canonical SMILES [Si]
Isomeric SMILES [Si]
WGK Germany 2
RTECS VW0400000
PubChem CID 5461123
Molecular Weight 28.09

Certificates

Certificate of Analysis(COA)

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Chemical and Physical Properties

Boil Point(°C)2355°C
Melt Point(°C)1410°C

Safety and Hazards(GHS)

Signal Warning
Hazard Statements

H303:May be harmful if swallowed

Precautionary Statements

P312:Call a POISON CENTER or doctor/... if you feel unwell.

WGK Germany 2
RTECS VW0400000

Related Documents

References

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