zirconium(iv) t-butoxide | SCHEMBL108395 | Zirconium(IV) tert-butoxide, packaged for use in deposition systems | MFCD00075085 | Zirconium(IV) tert-butoxide | CS-0111459 | F87227 | Zirconium(IV)t-butoxide | Zirconium(IV) t-butoxide (99.99%-Zr) | Zirconium(
Specifications & Purity
packaged for use in deposition systems
Product Description
Application
Zirconium tert -butoxide (ZTB) precursor is used to deposit thin films of Zirconia and other zirconium containing films by atomic layer deposition and chemical vapor deposition methods. Zirconium oxide thin films can also be grown at low temperatures, ranging from 150°C to 300°C, by the presence of moisture along with ZTB or by UV-enhanced atomic layer deposition (UV-ALD) process.